Crystallization method
AssigneeCommissariat a l'Energie Atomique
InventorPhilippe Bouchut
Life of this patent
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Abstract
To crystallize a material, a thin layer of amorphous or polycrystalline material is deposited on at least one area of the surface of a top part of a substrate. A metal layer is then deposited on at least one area of the thin layer. Thermal treatment is then performed to enable crystalline growth of the material of the thin layer, resulting in: a rapid temperature increase of the top part of the substrate until liquid or overmelted liquid state is achieved, and heat transfer from the interface between the top part of the substrate and the thin layer to the interface between the thin layer and the metal layer.
Claims13
A solid phase crystallization method, comprising the following successive steps:
- a) depositing a first layer of amorphous or polycrystalline material on a surface of a top part of a substrate,
- b) depositing a metal layer with a thickness in a range between 1 nm and 20 nm on the first layer, the top part of the substrate comprising, after step b), a second material in an amorphous state able to change to a liquid or an overmelted liquid state, and
- c) performing a thermal treatment to enable crystalline growth of the material of the first layer, simultaneously causing:
- a temperature increase of the top part of the substrate at a rate of more than 100K per second until the second material of the top part of the substrate goes to the liquid or the overmelted liquid state, and
- a heat transfer from an interface between the top part of the substrate and the first layer to an interface between the first layer and the metal layer.
Dependencies are inferred from the claim text.