Method of making transistor including reentrant profile

Abstract

A method of manufacturing a transistor includes providing a substrate including in order an electrically conductive material layer and an electrically insulating material layer; depositing a resist material layer over the electrically insulating material layer; patterning the resist material layer to expose a portion of the electrically insulating material layer; removing the exposed electrically insulating material layer to expose a portion of the electrically conductive material layer; removing the exposed electrically conductive material layer to create a reentrant profile in the electrically conductive material layer and the electrically insulating material layer; conformally coating the substrate and the exposed material layers with a second electrically insulating material layer; conformally coating the second electrically insulating material layer with a semiconductor material layer; and directionally depositing an electrically conductive material layer over the semiconductor material layer.

Dependencies are inferred from the claim text.