Semiconductor structure processing using multiple laser beam spots

A method for selectively irradiating structures on or within a semiconductor substrate using a plurality of pulsed laser beams, the structures being substantially straight strip-shaped objects having a length, a substantially uniform width and a depth, the structures being arranged in a row extending in a generally lengthwise direction that is perpendicular to a direction in which the objects' lengths are measured, the method comprising:

• generating a first pulsed laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate;
• generating a second pulsed laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate;
• directing respective first and second pulses from the first and second pulsed laser beams onto distinct first and second structures in the row, wherein the first and second laser beam axes intersect the semiconductor substrate at respective first and second spots, and wherein the first and second spots are purposefully offset from each other by a deliberate amount in the direction in which the objects' lengths are measured;
• and
• moving the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row.