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US 7,923,289 B2Granted
Process for fabricating a semiconductor package
AssigneeInternational Rectifier Corporation
InventorsMark Pavier, Andy Farlow
Life of this patent
Estimating the term…
Abstract
A process for fabricating a semiconductor package which includes using an exothermically active nanoparticle paste to join an electrode of a semiconductor die to a support body.
Claims18
A process for fabricating a power semiconductor device, comprising:
- disposing a mass of electrically conductive and exothermically active nanoparticle paste between an electrically conductive electrode of a semiconductor die and an electrically conductive support body;
- applying energy to a portion of said mass of electrically conductive nanoparticle paste long enough to initiate an exothermic reaction to melt said mass, wherein said applying is discontinued before the completion of said exothermic reaction;
- and
- cooling said molten mass to join said electrically conductive electrode to said electrically conductive support body.
1 more element
A process for fabricating a semiconductor device, comprising:
- disposing a mass of conductive and exothermically active nanoparticle paste between a semiconductor die and a support body;
- applying energy to a portion of said mass of conductive and exothermically active nanoparticle paste long enough to initiate an exothermic reaction to melt said mass, wherein said applying is discontinued before the completion of said exothermic reaction;
- and
- cooling said molten mass to join said semiconductor die to said support body.
1 more element
Dependencies are inferred from the claim text.