Method of fabricating a phase-change memory
AssigneesNanya Technology Corporation, Windbond Electronics Crop.
InventorsYi-Chan Chen, Wen-Han Wang
Life of this patent
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Abstract
A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first phase-change material is formed in the first isolation layer, wherein the top electrode and the bottom electrode are electrically connected via the first phase-change material. Since the phase-change material can have a diameter less than the resolution limit of the photolithography process, an operating current for a state conversion of the phase-change material pattern may be reduced so as to decrease a power dissipation of the phase-change memory device.
Claims6
A method of fabricating a phase-change memory, comprising:
- forming a bottom electrode on a substrate;
- forming a first isolation layer on the bottom electrode;
- patterning the first isolation layer so as to form a trench exposing the bottom electrode;
- conformably forming a phase-change material to cover the surface of the first isolation layer and the trench;
- etching the phase-change material to leave a phase-change material pillar adjacent to the sidewalls of the trenches;
- etching the bottom electrode exposed in the trenches to expose the substrate, such that a sidewall of the phase-change material adjacent to the trench is aligned to a sidewall of the bottom electrode adjacent to the trench;
- and
- forming a second isolation layer to fill the trench.
Dependencies are inferred from the claim text.