Method and structure for reducing cross-talk in image sensor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChing-Chun Wang, Tzu-Hsuan Hsu, Han-Chi Liu, Chun-Ming Su
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Abstract
Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.
Claims20
A method of fabricating an image sensor device, comprising:
- providing a semiconductor substrate having a front side and a back side;
- forming a semiconductor component in the substrate;
- forming a first isolation structure at the front side of the semiconductor substrate;
- thinning the semiconductor substrate from the back side;
- and
- forming a second isolation structure at the back side of the semiconductor substrate;
- wherein the first and second isolation structures are located on the same side of the semiconductor component and are shifted with respect to each other.
A method of fabricating an image sensor device, comprising:
- providing a semiconductor substrate;
- performing a first implantation process to the substrate to form a first doped isolation feature, the first implantation process using a first implant energy;
- performing a second implantation process to the substrate to form a second doped isolation feature, the second implantation process using a second implant energy different from the first implant energy;
- and
- forming first and second light sensing elements in the substrate;
- wherein the first and second doped isolation features are disposed between the first light sensing element and the second light sensing element, and wherein the first and second doped isolation features are shifted with respect to each other.
A method of fabricating an image sensor device, comprising:
- providing a substrate having a front side and a back side;
- forming a first isolation structure in the substrate, the first isolation structure extending from the front side of the substrate toward the back side of the substrate;
- thinning the substrate from the back side, the substrate having a thickness after the thinning;
- forming a second isolation structure in the substrate, the second isolation structure extending from the back side of the substrate toward the front side of the substrate;
- and
- forming first and second light sensing elements in the substrate, the first and second light sensing elements being formed on opposite sides of the first and second isolation features;
- wherein the forming the first and second isolation structures are carried out in a manner so that the first and second isolation structures are shifted with respect to each other.
Dependencies are inferred from the claim text.