Integrated getter area for wafer level encapsulated microelectromechanical systems

A method of manufacturing a microelectromechanical device having a mechanical structure, a periphery area and a fixed electrode that are disposed over or in a substrate and in a chamber which is formed, at least in part, by a thin film encapsulation structure, the method comprising:

• forming the mechanical structure disposed over the substrate wherein at least a portion of the mechanical structure is disposed in the chamber;
• depositing a fluid in the chamber;
• forming the periphery area disposed over the substrate, wherein the periphery area includes a plurality of gaps therein, and wherein the plurality of gaps is disposed in the chamber and exposed to the fluid;
• forming the fixed electrode having a plurality of gaps therein;
• and
• sealing the chamber by depositing the thin film encapsulation structure over the mechanical structure and the periphery area, to partially define and seal the chamber,
• wherein the fluid is contained in the chamber after the chamber is sealed,
• wherein the mechanical structure and the periphery area are formed within a single layer that extends over the substrate, and
• wherein the plurality of gaps and the mechanical structure are etched in a same etching process.

A method of manufacturing a microelectromechanical device having a mechanical structure and a fixed electrode that are disposed over or in a substrate and in a chamber which is formed, at least in part, by a thin film encapsulation structure, the method comprising:

• forming the mechanical structure disposed over the substrate wherein at least a portion of the mechanical structure is disposed in the chamber;
• depositing a fluid in the chamber;
• forming a periphery area disposed over the substrate, wherein the periphery area includes a plurality of gaps therein;
• forming the fixed electrode having a plurality of gaps therein;
• and
• sealing the chamber by depositing the thin film encapsulation structure over the mechanical structure, to partially define and seal the chamber,
• wherein the fluid is contained in the chamber after the chamber is sealed;
• wherein the mechanical structure and the periphery area are formed within a single layer that extends over the substrate, and
• wherein the plurality of gaps and the mechanical structure are etched in a same etching process.

A method of manufacturing a microelectromechanical device having a mechanical structure, a periphery area and a fixed electrode that are disposed over or in a substrate and in a chamber which is formed, at least in part, by a thin film encapsulation structure, the method comprising:

• forming the mechanical structure disposed over the substrate wherein at least a portion of the mechanical structure is disposed in the chamber;
• depositing a fluid in the chamber;
• forming the periphery area disposed over the substrate, wherein the periphery area includes a plurality of gaps therein, and wherein the plurality of gaps is disposed in the chamber and exposed to the fluid;
• and
• sealing the chamber by depositing the thin film encapsulation structure over the mechanical structure and the periphery area, to partially define and seal the chamber, wherein the fluid is contained in the chamber after the chamber is sealed,
• wherein the mechanical structure and the periphery area are formed within a single layer that extends over the substrate, and
• wherein the plurality of gaps and the mechanical structure are etched in a same etching process.

A method of manufacturing a microelectromechanical device having a mechanical structure, a periphery area, a getter area, moveable and fixed electrodes that are disposed over or in a substrate and in a chamber which is formed, at least in part, by a thin film encapsulation structure, the method comprising:

• forming the mechanical structure disposed over the substrate wherein the mechanical structure includes the moveable and fixed electrodes;
• forming the periphery area disposed over the substrate;
• forming the getter area including a plurality of gaps, wherein the plurality of gaps is disposed in predetermined portions of the periphery area and the fixed electrode;
• forming the chamber, wherein at least a portion of the mechanical structure and the getter area are disposed in the chamber, and wherein the getter area is exposed to a fluid in the chamber;
• and
• sealing the chamber by depositing the thin film encapsulation structure over the mechanical structure and the periphery area, to partially define and seal the chamber,
• wherein the fluid is contained in the chamber after the chamber is sealed;
• and
• wherein the mechanical structure and the periphery area are formed within a single layer that extends over the substrate, and
• wherein the plurality of gaps and the mechanical structure are etched in a same etching process.

A method of manufacturing a microelectromechanical device having a mechanical structure and a periphery area that are disposed over or in a substrate and in a chamber which is formed, at least in part, by a thin film encapsulation structure, the method comprising:

• forming the mechanical structure disposed over the substrate wherein at least a portion of the mechanical structure is disposed in the chamber;
• depositing a fluid in the chamber;
• forming the periphery area disposed over the substrate, wherein the periphery area includes a plurality of gaps therein, and wherein the plurality of gaps is disposed in the chamber and exposed to the fluid;
• and
• sealing the chamber by depositing the thin film encapsulation structure over the mechanical structure and the periphery area, to partially define and seal the chamber, wherein the fluid is contained in the chamber after the chamber is sealed, and wherein the thin film encapsulation structure includes:
• a first encapsulation layer comprising polycrystalline silicon, porous polycrystalline silicon, amorphous silicon, silicon carbide, silicon nitride, silicon/germanium, germanium, or gallium arsenide;
• and
• a second encapsulation layer, disposed on or over the first encapsulation layer, the second encapsulation layer comprising polycrystalline silicon, porous polycrystalline silicon, amorphous silicon, germanium, silicon/germanium, gallium arsenide, or silicon carbide;
• and
• wherein the mechanical structure and the periphery area are formed within a single layer that extends over the substrate, and
• wherein the plurality of gaps and the mechanical structure are etched in a same etching process.