Non-volatile resistance switching memory

A program storage device readable by a computer, said device tangibly embodying a program of instructions executable by the computer to perform steps for controlling deposition of a switching material, said steps of controlling comprising steps of:

• depositing over a substrate a non-volatile resistance switching transition metal oxide-material, said switching material being reversibly switchable between at least a first conductivity state and a second conductivity state, each of the states being persistent, wherein the transition metal oxide material is selected from the group consisting of SrTiO3 doped with Chromium and SrZrO3 doped with Chromium;
• wherein depositing the switching material comprises depositing said switching material by a CMOS deposition technique at a temperature lower than 100° C., using a mixture of at least Argon and Oxygen gases in a range of Ar:O2 between 5:1 and 1:5, giving said switching material an amorphous structure resulting from the used deposition temperature such that no post-deposition annealing process is required.