Positive resist composition and patterning process using the same
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsJun Hatakeyama, Takanobu Takeda
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Abstract
The present invention provides a polymer suitable as a base resin for a positive resist composition, especially for a chemically amplified positive resist composition, having a high sensitivity, a high degree of resolution, a good pattern configuration after exposure, and in addition an excellent etching resistance; a positive resist composition using the polymer; and a patterning process. The positive resist composition of the present invention is characterized in that it contains at least, as a base resin, a polymer whose hydrogen atom of a phenolic hydroxide group is substituted by an acid labile group represented by the following general formula (1).
Claims25
A positive resist composition, wherein the positive resist composition contains at least, as a base resin, a polymer whose hydrogen atom of a phenolic hydroxide group is substituted by an acid labile group represented by the following general formula (1):
- (in the formula, R1 and R2 each represent independently any of a linear, a branched, and a cyclic alkyl group having 1 to 6 carbon atoms, and a hydrogen atom, R3 represents a group selected from a 1,2,3-indanyl group, a 1,2-acenaphthenyl group, a 1,2-aceanthrenyl group, and a 4,5-acephenanthrenyl group;
- here, the term 1,2- means 1-, 2-, or a mixture of them;
- similarly, the term 1,2,3- means 1-, 2-, 3-, or a mixture of them, and the term 4,5- means 4-, 5-, or a mixture of them).
Dependencies are inferred from the claim text.