Glass substrate for mask blank and method of polishing for producing the same
AssigneeAsahi Glass Company, Limited
InventorsMasabumi Ito, Hiroshi Kojima
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AssigneeAsahi Glass Company, Limited
InventorsMasabumi Ito, Hiroshi Kojima
Estimating the term…
The present invention aims at providing a glass substrate required to have a surface polished with extremely high accuracy as in glass substrates for reflective masks for use in EUVL; and a polishing method for producing the glass substrate. The present invention provides a glass substrate for mask blank, which is a glass substrate comprising SiO2 as a main component and having a polished main surface, wherein concave defects and convex defects on the main surface have a depth of 2 nm or smaller and a height of 2 nm or smaller, respectively, and have a half-value width of 60 nm or smaller, so that the concave defects and/or the convex defects do not cause phase defects when the glass substrate is used to produce a mask for exposure and the mask is used. Also disclosed are a polishing method for producing the glass substrate, and a mask blank and a mask for exposure using the glass substrate.
A glass substrate comprising SiO2 as a main component and having a polished main surface, wherein concave defects and convex defects on the main surface have a depth of 2 nm or smaller and a height of 2 nm or smaller, respectively, and have a half-value width of 60 nm or smaller.
A method of polishing for producing a glass substrate, which comprises supplying a polishing slurry comprising colloidal silica having an average primary-particle diameter of 60 nm or smaller and water to a gap between a glass substrate comprising SiO2 as a main component and a nap layer of a polishing pad and polishing a main surface of the glass substrate with the nap layer, wherein the nap layer of the polishing pad has a compressibility of 10% or higher and a compressive modulus of 85% or higher to thereby polish the main surface so that concave defects and convex defects on the polished main surface have a depth of 2 nm or smaller and a height of 2 nm or smaller, respectively, and have a half-value width of 60 nm or smaller.
Dependencies are inferred from the claim text.