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US 7,923,177 B2Granted
Method for making a reflection lithographic mask and mask obtained by said method
AssigneeCommissariat a l'Energie Atomique
InventorChristelle Charpin-Nicolle
Life of this patent
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Abstract
The invention relates to a process for fabricating an extreme ultraviolet photolithography mask operating in reflection, comprising a substrate, a mirror structure (uniformly deposited on the substrate, and an absorbent element forming a pattern deposited on the mirror structure, characterized in that the absorbent element is obtained by the irradiation and then development of an organometallic resist layer deposited on the mirror structure.
Claims6
A process for fabricating an extreme ultraviolet photolithography mask operating in reflection, comprising:
- depositing, on a substrate coated with a reflecting structure reflective at the operating wavelength of the mask, an absorption layer containing a metal having a high absorption coefficient for the wavelength;
- and
- etching the absorbent layer in a desired pattern so as to define a pattern of absorbent zones that are absorbent at the operating wavelength of the mask,
- wherein the deposited absorption layer is a layer of an organometallic compound sensitive to bombardment and containing the metal having a high absorption coefficient, and
- wherein the absorbent zones formed by the organometallic compound are polymerized after selective irradiation of the layer in these zones.
2 more elements
Dependencies are inferred from the claim text.