US 7,923,076 B2 · Plasma deposition apparatus and deposition method utilizing same

Abstract

A plasma deposition apparatus is provided. The plasma deposition apparatus comprises a chamber. A pedestal is placed in the chamber. A plasma generator is placed in the chamber and over the pedestal. The plasma generator comprises a plasma jet for plasma thin film deposition having a discharge direction angle θ1 of 0° to 90° between a normal direction of the pedestal and the discharge direction of the plasma jet. A gas-extracting apparatus is placed in the chamber and over the pedestal. The gas-extracting apparatus comprises a gas-extracting pipe providing a pumping path for particles and side-products having a pumping direction angle θ2 of 0° to 90° between the normal direction of the pedestal and the pumping direction of the gas-extracting pipe.

Claims9

Dependent claims

A plasma thin film deposition method performed in a chamber, comprising:

providing a substrate;
generating a plasma beam for thin film deposition to form a thin film on the substrate using a plasma generator, wherein the plasma generator comprises a plasma jet having a discharge direction angle θ1 larger than 0° and less than 90° between a normal direction of the substrate and the discharge direction of the plasma jet;
and
pumping to remove particles or side-products from the chamber by a gas-extracting pipe extending into the chamber, wherein the gas-extracting pipe has a pumping direction angle θ2 larger than 0° and less than 90° between the normal direction of the substrate and the pumping direction of the gas-extracting pipe, and wherein the chamber is kept at an ambient atmospheric pressure.

1 more element

Dependencies are inferred from the claim text.

Plasma deposition apparatus and deposition method utilizing same

Life of this patent

Plasma deposition apparatus and deposition method utilizing same

Life of this patent

Abstract

Claims9