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US 7,923,069 B2Granted
Multi-station deposition apparatus and method
AssigneeApplied Materials, Inc.
InventorsMei Chang, Lawrence C. Lei, Walter B. Glenn
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Abstract
A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.
Claims10
A method of depositing a material on a wafer comprising:
- introducing a first deposition gas proximate a wafer disposed a first deposition position within a vacuum deposition chamber, the vacuum deposition chamber having a second deposition position disposed adjacent the first deposition position;
- introducing a first deposition gas proximate the wafer while positioned;
- providing a first gas curtain between the first deposition position and a second deposition position within the vacuum deposition chamber;
- and
- moving the wafer to the second deposition while maintaining a relative position between the first gas curtain and the wafer.
2 more elements
Dependencies are inferred from the claim text.