Method of enabling selective area plating on a substrate
AssigneeIntel Corporation
InventorsOmar J. Bchir, Houssam Jomaa, Islam A. Salama, Yonggang Li
Life of this patent
Estimating the term…
Loading patent…
AssigneeIntel Corporation
InventorsOmar J. Bchir, Houssam Jomaa, Islam A. Salama, Yonggang Li
Estimating the term…
A method of enabling selective area plating on a substrate includes forming a first electrically conductive layer (310) over substantially all of the substrate, covering sections of the first electrically conductive layer with a mask (410) such that the first electrically conductive layer has a masked portion and an unmasked portion, forming a second electrically conductive layer (710, 1210), the second electrically conductive layer forming only over the unmasked portion of the first electrically conductive layer, and removing the mask and the masked portion of the first electrically conductive layer. In an embodiment, the mask covering sections of the first electrically conductive layer is a non-electrically conductive substance (1010) applied with a stamp (1020). In an embodiment, the mask is a black oxide layer.
A method of enabling selective area plating on a substrate, the method comprising:
A method of enabling selective area plating on a substrate, the method comprising:
Dependencies are inferred from the claim text.