Fine resist pattern forming method and nanoimprint mold structure
AssigneeElpida Memory, Inc.
InventorMasahito Hiroshima
Life of this patent
Estimating the term…
Abstract
A light-transmitting mold structure having a mold pattern corresponding to a portion to form a pattern by nanoimprint and a conductive film pattern corresponding to a portion to form a pattern by nonadiabatic near-field exposure is used to irradiate UV light from a back surface of the mold structure and to perform nonadiabatic near-field light exposure in an imprint process so that all patterns having various sizes for simulating various designs can be faithfully transferred by a single imprint process (imprint & UV exposure).
Claims19
A fine resist pattern forming method by transferring an ultrafine pattern having a line width of 10 nm or less with nonadiabatic near-field light exposure and other sized pattern with nanoimprint to a photoresist formed on a surface of a workpiece substrate, said method comprising:
- providing a light-transmitting mold structure having a mold pattern corresponding to a portion to form a pattern by nanoimprint and a conductive film pattern corresponding to a portion to form a pattern by nonadiabatic near-field exposure, the mold pattern including convex patterns having a height which is equal to the sum of a thickness of the photoresist and a thickness of the conductive film pattern;
- imprinting the mold pattern to the photoresist such that the mold pattern contacts the surface of the workpiece substrate, and simultaneously irradiating nonresonant light of a wavelength band other than the photosensitive band of said photoresist from a back surface of the light-transmitting mold structure;
- and
- performing exposure by nonadiabatic near-field light generated at each edge portion of said conductive film pattern.
A method comprising:
- providing a mask including on one side a convex pattern and a conductive film pattern;
- providing a substrate having a photoresist layer formed on a surface of the substrate, the convex pattern having a height which is equal to the sum of a thickness of the photoresist layer and thickness of the conductive film pattern;
- pressing the convex pattern of the mask to the photoresist layer formed on the substrate such that the convex pattern contacts the surface of the substrate;
- irradiating a light to the photoresist layer from another side of the mask to generate a nonadiabatic near-field light at an edge portion of the conductive film pattern, the nonadiabatic near-field light reaching the photoresist layer;
- and
- removing the mask from the substrate to form a photoresist pattern on the substrate.
A method comprising:
- providing a mask including on one side a first mask pattern and a second mask pattern;
- providing a semiconductor substrate having a photoresist layer formed on a surface of the substrate, the first mask pattern including a convex shape having a height which is equal to the sum of a thickness of the photoresist layer and a thickness of the second mask pattern;
- pressing the first mask pattern of the mask to the photoresist layer such that the first mask pattern contacts the surface of the substrate;
- irradiating a light to the photoresist layer from another side of the mask to generate a nonadiabatic near-field light at an edge portion of the second mask pattern, the nonadiabatic near-field light reaching the photoresist layer;
- removing the mask from the semiconductor substrate;
- and
- patterning a surface of the semiconductor substrate to form a photoresist pattern on the semiconductor substrate.
Dependencies are inferred from the claim text.