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US 7,922,819 B2Granted
Semiconductor manufacturing device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
Estimating the term…
Abstract
Reduction in a space of a manufacturing line, improvement of efficiency, improvement of utilization efficiency of materials, additionally, reduction in the manufacturing cost is realized by applying a means for describing a wiring pattern or a resist pattern directly on a substrate, a means for locally performing a vapor phase process such as film formation or etching under atmospheric pressure or adjacent to atmospheric pressure.
Claims40
A semiconductor manufacturing apparatus comprising:
- a plasma generating device for generating a plasma;
- a first chamber for performing a plasma treatment on a first part of an object by the plasma therein under atmospheric pressure or approximate to atmospheric pressure;
- a rail for sliding the plasma generating device, the rail provided in the first chamber;
- and
- an ink-jet device for applying a droplet to a second part of the object simultaneously with performing the plasma treatment,
- wherein the plasma generating device is provided in the first chamber,
- wherein the ink-jet device is provided in a second chamber;
- and
- wherein the object is level transferred in the first chamber along a first direction and the plasma generating device is moved in the first chamber along the rail and along a second direction intersecting with the first direction and in a direction parallel to a side of the object.
6 more elements
A semiconductor manufacturing apparatus comprising:
- a first plasma generating device for generating a first plasma;
- a second plasma generating device for generating a second plasma;
- a first chamber for performing a first plasma treatment on a first part of an object by the first plasma therein under atmospheric pressure or approximate to atmospheric pressure;
- a second chamber for performing a second plasma treatment on the object by the second plasma therein under atmospheric pressure or approximate to atmospheric pressure;
- and
- an ink-jet device for applying a droplet to a second part of the object simultaneously with performing the first plasma treatment,
- wherein the first plasma generating device is provided in the first chamber and the second plasma generating device is provided in the second chamber,
- wherein the ink-jet device is provided in a third chamber,
- wherein the object is level transferred in the first chamber, the second chamber and the third chamber along a first direction and the first plasma generating device is moved in the first chamber along a second direction intersecting with the first direction and in a direction parallel to a side of the object.
6 more elements
A semiconductor manufacturing apparatus comprising:
- at least one plasma generating device for generating a plasma;
- a first chamber for performing a plasma treatment on a first part of an object by the plasma therein under atmospheric pressure or approximate to atmospheric pressure;
- a rail for sliding the plasma generating device, the rail provided in the first chamber;
- and
- at least one ink-jet device for applying a droplet to a second part of the object simultaneously with performing the plasma treatment;
- wherein the plasma generating device is provided in the first chamber,
- wherein the ink-jet device is provided in a second chamber,
- wherein the object is level transferred in the first chamber along a first direction and the plasma generating device is moved in the first chamber along the rail and along a second direction intersecting with the first direction and in a direction parallel to a side of the object, and
- wherein the ink-jet device is moved in the second chamber along a third direction intersecting with the first direction.
6 more elements
Dependencies are inferred from the claim text.