Production process for high purity polycrystal silicon and production apparatus for the same

A production process for high purity polycrystal silicon characterized by:

• using a vertical reactor comprising a silicon chloride gas-feeding nozzle, a reducing agent gas-feeding nozzle and a waste gas discharge pipe, in which the silicon chloride gas-feeding nozzle is inserted and installed from an upper part of the reactor into an inside of the reactor,
• feeding a silicon chloride gas from the silicon chloride gas-feeding nozzle and a reducing agent gas from the reducing agent gas-feeding nozzle into the reactor,
• forming polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and
• allowing the polycrystal silicon to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.