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US 7,922,389 B2Granted
Substrate based on temperature sensing
AssigneeDolpan Audio, LLC
InventorDavid L Cave
Life of this patent
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Abstract
A method for providing accurate temperature sensing of a substrate utilizing the PN junction of a transistor formed on the substrate is described.
Claims18
An arrangement for measuring the temperature of a substrate, the arrangement comprising:
- a sensing transistor on the substrate;
- and
- a sensing and control circuit coupled to the sensing transistor, wherein the sensing and control circuit is configured to:
- provide a voltage to the emitter of the sensing transistor;
- current drive the base of the sensing transistor with a first current IB1;
- measure a first base emitter voltage Vbe1;
- current drive the base of the sensing transistor with a second current IB2 such that IB2/IB1 equals a constant M;
- measure a second base emitter voltage Vbe2;
- and
- determine the temperature T of the substrate using the relationship ΔVbe=ηKT/q ln IB2/IB1, where ΔVbe=Vbe2−Vbe1, K is Boltzmann's Constant, and emission coefficient η and electron charge q are constants.
7 more elements
A method of sensing the temperature of a substrate having a sensing transistor formed therein, the method comprising:
- current driving the base of the sensing transistor with a first current;
- measuring a base emitter voltage first response to the first current;
- current driving the base of the sensing transistor with a second current, wherein the second current has a predetermined relationship with the first current;
- measuring a base emitter voltage second response to the second current;
- and
- determining the temperature of the substrate, wherein the only measurements said determining uses are the first and second responses.
3 more elements
An arrangement for measuring the temperature of a substrate, the arrangement comprising:
- a substrate having a sensing transistor formed therein;
- and
- a sensing and control circuit configured to operate the sensing transistor by current driving the base of the sensing transistor with a first current, measuring a base emitter voltage first response to the first current, current driving the base of the sensing transistor with a second current, and measuring a base emitter voltage second response to the second current, wherein the second current has a predetermined relationship with the first current, and wherein the sensing and control circuit is further configured to determine the temperature of the substrate using the first and second responses.
Dependencies are inferred from the claim text.