Enhancement mode gallium nitride power devices

A Ga-face enhancement mode high electrode mobility transistor device, comprising:

• a GaN buffer layer;
• a p-type bottom cap on the GaN buffer layer;
• a GaN channel layer on an opposite side of the bottom cap from the GaN buffer layer;
• an AlxGaN layer on an opposite side of the GaN channel layer from the cap layer;
• a p-type top cap on an opposite side of the AlxGaN layer from the channel layer;
• a top gate adjacent to the top cap;
• a source and a drain;
• and
• an access region between either the source and the gate or the drain and the gate.