Nickel tin bonding system with barrier layer for semiconductor wafers and devices
AssigneeCree, Inc.
InventorsMatthew Donofrio, David B. Slater, Jr., John A. Edmond, Hua-Shuang Kong
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Abstract
A light emitting diode structure is disclosed that includes a light emitting active portion formed of epitaxial layers and carrier substrate supporting the active portion. A bonding metal system that predominates in nickel and tin joins the active portion to the carrier substrate. At least one titanium adhesion layer is between the active portion and the carrier substrate and a platinum barrier layer is between the nickel-tin bonding system and the titanium adhesion layer. The platinum layer has a thickness sufficient to substantially prevent tin in the nickel tin bonding system from migrating into or through the titanium adhesion layer.
Claims20
A light emitting diode structure comprising:
- a light emitting active portion formed of epitaxial layers;
- a carrier substrate for supporting said active portion;
- a bonding metal system that predominates in nickel and tin joining said active portion to said carrier substrate;
- and
- at least one barrier layer adjacent said bonding metal system that predominates in nickel and tin, said barrier layer having a composition and a thickness sufficient to substantially prevent tin in said bonding metal system that predominates in nickel and tin from migrating through said barrier layer;
- wherein said bonding metal system includes gold in an amount greater than 0.3 percent and less than 36 percent by weight of said bonding metal system.
A light emitting diode structure comprising:
- a light emitting active portion formed of epitaxial layers;
- a carrier substrate for supporting said active portion;
- a bonding metal system that predominates in nickel and tin joining said active portion to said carrier substrate;
- and
- a barrier layer between said bonding metal system and said epitaxial layers, said barrier layer being formed of a material and having a thickness sufficient to substantially preclude the formation or migration of free metals or alloys that have melting points lower than 300° C.;
- wherein said bonding metal system includes gold in an amount greater than 0.3 percent and less than 36 percent by weight of said bonding metal system.
Dependencies are inferred from the claim text.