Semiconductor device interconnecting unit, semiconductor device and high-frequency module having a millimeter wave band

A semiconductor device with a high-frequency signal having a millimeter wave band being inputted/outputted to/from said semiconductor device, said semiconductor device comprising:

• a part of a band pass filter configured to pass therethrough the high-frequency signal having a millimeter wave band by using a first LC resonance circuit including a first fixed capacitor, a first variable capacitor, and a first fixed inductor;
• wherein said part of said band pass filter is connected to a remainder of said band pass filter provided outside said semiconductor device, said remainder including a second LC resonance circuit including a second fixed capacitor, a second variable capacitor, and a second fixed inductor,
• wherein the part and the remainder are connected through a bonding wire connected to a first bond pad formed on a surface of the part, and to a second bond pad formed on a surface of the remainder, and
• wherein a pass band for the high-frequency signal is changed by changing capacitance values of said variable capacitors.

A high-frequency module with a semiconductor device to/from which a high-frequency signal having a millimeter wave band is inputted/outputted being installed together with other elements or devices in said high-frequency module,

• wherein said semiconductor device comprises a part of a band pass filter for passing therethrough the high-frequency signal having a millimeter wave band by using a first LC resonance circuit including a first fixed capacitor, a first variable capacitor, and a first fixed inductor;
• a part of said band pass filter is connected to a remainder of said band pass filter provided outside said semiconductor device, said remainder including a second LC resonance circuit including a second fixed capacitor, a second variable capacitor, and a second fixed inductor;
• and
• wherein the part and the remainder are connected through a bonding wire connected to a first bond pad formed on a surface of the part, and to a second bond pad formed on a surface of the remainder, and
• wherein a pass band for the high-frequency signal is changed by changing capacitance values of said variable capacitors.