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US 7,906,813 B2Granted
Semiconductor device having a first circuit block isolating a plurality of circuit blocks
AssigneeSeiko Epson Corporation
InventorJuri Kato
Life of this patent
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Abstract
A semiconductor device, includes: a semiconductor layer, arranged, via an insulation layer, on a region of a part of a semiconductor substrate; a first circuit block formed on the semiconductor layer; and a second and a third circuit blocks formed on the semiconductor substrate, isolated from each other by the first circuit block.
Claims10
A semiconductor device, comprising:
- a first circuit block including a first transistor and a second transistor, the first transistor including a first semiconductor layer that is disposed on a first insulator layer, the second transistor including a second semiconductor layer that is disposed on a second insulator layer, the first insulator layer and the second insulator layer being disposed on a substrate, the first insulator layer and the second insulator layer being separated by a first insulating part, the first insulating part separating the first transistor and the second transistor, a low-voltage driver device including the first circuit block;
- a second circuit block including a third transistor, the third transistor including a first part of the substrate, a first high-voltage driver device including the second circuit block;
- a third circuit block including a fourth transistor, the fourth transistor including a second part of the substrate, a second high voltage driver device including the third circuit block;
- a second insulating part that separates the first circuit block and the second circuit block;
- and
- a third insulating part that separates the first circuit block and the third circuit block,
- the second circuit block being disposed adjacent to the first circuit block,
- the third circuit block being disposed adjacent to the first circuit block,
- the second circuit block and the third circuit block being isolated by the first circuit block.
6 more elements
A semiconductor device, comprising:
- a first circuit block including a first transistor and a second transistor, the first transistor including a first semiconductor layer that is disposed on a first insulator layer, the second transistor including a second semiconductor layer that is disposed on a second insulator layer, the first insulator layer and the second insulator layer being disposed on a substrate, the first insulator layer and the second insulator layer being separated by a first insulating part, the first insulating part separating the first transistor and the second transistor, a low-voltage driver device including the first circuit block;
- a plurality of other circuit blocks arranged around the first circuit block, each of the plurality of other circuit blocks including a transistor that includes a part of the substrate;
- a plurality of high-voltage driver devices selected from at least one of the group consisting of:
- a DRAM;
- a sensor interface circuit;
- a nonvolatile memory;
- a power circuit;
- a high-voltage driver;
- a radio frequency circuit;
- and
- an oscillation circuit;
- a power circuit
- a driver;
- and
- a digital-to-analog converter,
- each of the plurality of high-voltage driver devices including at least one of the plurality of other circuit blocks;
- and
- a plurality of other insulating parts, each of the plurality of other insulating parts separating the first circuit block and at least one of the plurality of other circuit blocks;
- each of the plurality of other circuit blocks being disposed adjacent to the first circuit block;
- each of the plurality of other circuit blocks being isolated by the first circuit block.
17 more elements
Dependencies are inferred from the claim text.