PVD target with end of service life detection capability
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Li Hsiao, Chen-Hua Yu, Jean Wang, Lawrance Sheu
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Li Hsiao, Chen-Hua Yu, Jean Wang, Lawrance Sheu
Estimating the term…
A PVD target structure for use in physical vapor deposition. The PVD target structure includes a consumable slab of source material and one or more detectors for indicating when the slab of source material is approaching or has been reduced to a given quantity representing a service lifetime endpoint of the target structure. Each detector includes an enclosure which may be made by forming a plurality of bores in a bulk material and separating the bulk material into a plurality of discrete enclosure units each including one of the bores. Alternatively, the enclosure of the detector may be made using a mold having one or more mold members and an extrusion, casting, electrical chemical plating, and/or sheet forming method.
A method of forming a physical vapor deposition target comprising the steps of:
Dependencies are inferred from the claim text.