RFIC with on-chip multiple band power amplifiers

A radio frequency integrated circuit (RFIC) comprises:

• a silicon substrate;
• a CMOS baseband processing module on the silicon substrate, wherein the CMOS baseband processing module is coupled to convert outbound data into an outbound symbol stream;
• CMOS transmitter circuitry on the silicon substrate, wherein the CMOS transmitter circuitry is coupled to convert the outbound symbol stream into an outbound RF signal;
• and
• a bipolar power amplifier module on the silicon substrate, wherein the bipolar power amplifier module is operable in a 5 GHz frequency band to amplify the outbound RF signal wherein the bipolar power amplifier module includes a low emitter to ground impedance.

A radio frequency integrated circuit (RFIC) comprises:

• a silicon substrate;
• CMOS processing circuitry on the silicon substrate;
• a first power amplifier module on the silicon substrate, wherein the first power amplifier module is operable in a first GHz frequency band;
• and
• a second power amplifier module on the silicon substrate, wherein the second power amplifier module is operable in a second GHz frequency band and wherein at least one of the first and second power amplifier modules includes a bipolar power amplifier having a low emitter to ground impedance.