Circuit and method for retrieving data stored in semiconductor memory cells

A circuit comprising:

• at least one memory cell to store data, said data corresponding to predetermined values of an electrical characteristic thereof, wherein said electrical characteristic values are affected by a variability with temperature according to a first variation law;
• and
• a voltage generator to generate a voltage to be supplied to the at least one memory cell for retrieving the data stored therein, the voltage generator including first means to cause the generated voltage to take a value in a set of target values including at least one target value, depending on an operation to be performed on the memory cell,
• wherein the voltage generator further includes second means for causing the value taken by the generated voltage to vary with temperature according to a prescribed second variation law, said second means including a compensation circuit element including a MOS-type variable-conductivity element having a threshold voltage exhibiting a variability with temperature corresponding to the variability of the memory cell to cause the variation of the value taken by the generated voltage.