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US 7,889,566 B2Granted
Flash memory device, programming method thereof and memory system including the same
AssigneeSamsung Electronics Co., Ltd.
InventorSang-ku Kang
Life of this patent
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Abstract
A verify voltage may be changed into a plurality of voltage levels based upon a logic state of each of the memory cells and characteristics or logic states of other memory cells (e.g., adjacent) to each of the memory cells.
Claims16
A method of operating a non-volatile memory device, the method comprising:
- providing a first verification voltage to a first memory cell of a plurality of memory cells, the first memory cell to be programmed to a first logic state;
- and
- providing a second different verification voltage to a second memory cell of the plurality of memory cells, the second memory cell to be programmed to the first logic state.
A flash memory device comprising:
- an array of memory cells each to store one of a plurality of logic states;
- a buffer circuit to write program data in the memory cells;
- and
- a verify level control circuit to change a verify voltage based upon logic states to be programmed in the memory cells and logic states to be programmed in memory cells adjacent to the memory cells.
1 more element
Dependencies are inferred from the claim text.