US 7,889,565 B2 · Nonvolatile semiconductor memory device and control method

Abstract

A nonvolatile semiconductor memory device includes a plurality of memory cells, a read/program circuit which supplies a program voltage and a program verification voltage to the plurality of memory cells and desired data is programmed, supplies a first program verification voltage to the plurality of memory cells and then supplies a second program verification voltage to the plurality of memory cells when programming the data, and a read/program control circuit which determines memory cells which reach a first data program state and memory cells which do not reach the first data program state when supplying the first program verification voltage, and determines memory cells which reach a second data program state and memory cells which do not reach the second data program state when supplying the second program verification voltage, and supplies a program control voltage which changes the program operation state for each memory cell.

Claims20

Dependent claims

A nonvolatile semiconductor memory device comprising:

a plurality of electrically reprogrammable memory cells;
a read/program circuit, said read/program circuit programming desired data to said plurality of memory cells by supplying a program voltage and a program verification voltage, supplying a first program verification voltage to said plurality of memory cells when programming said data, and supplying a second program verification voltage which has a different voltage level to said first program verification voltage to said plurality of memory cells;
and
a read/program control circuit which determines memory cells which reach a first data program state and memory cells which do not reach said first data program state when said first program verification voltage is supplied, and which determines memory cells which reach a second data program state and memory cells which do not reach said second data program state when said second program verification voltage is supplied, and changes a programming operation state of each memory cell of said plurality of memory cells based on a result of each determination.

1 more element

A method of controlling a nonvolatile semiconductor memory device which includes a plurality of electrically reprogrammable memory cells, said method comprising:

programming desired data by supplying a program voltage and a program verification voltage to said plurality of memory cells;
supplying a first program verification voltage to said plurality of memory cells when programming said data;
supplying to said plurality of memory cells a second program verification voltage which has a different level to said first program verification voltage:
determining memory cells which reach a first data program state and memory cells which do not reach said first data program state when supplying said first program verification voltage;
determining memory cells which reach a second data program state and memory cells which do not reach said second data program state when supplying said second program verification voltage;
and
supplying a program control voltage which changes a programming operation state of each memory cell based on a result of each of said determinations.

4 more elements

Dependencies are inferred from the claim text.

Nonvolatile semiconductor memory device and control method

Life of this patent

Nonvolatile semiconductor memory device and control method

Life of this patent

Abstract

Claims20