Memory device and method of controlling read level
AssigneeSamsung Electronics Co., Ltd.
InventorsKyoung Lae Cho, Donghun Yu
Life of this patent
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Abstract
Provided are memory devices and read level controlling methods. A memory device may include: a memory cell array that includes a plurality of memory cells; a counter that counts a number of memory cells with a threshold voltage included in a reference threshold voltage interval among the plurality of memory cells; a first decision unit that compares the counted number of memory cells with a threshold value to thereby decide whether to set a read level based on the reference threshold voltage interval; and a second decision unit that generates a new reference threshold voltage interval based on the comparison result between the counted number of memory cells and the threshold value.
Claims22
A memory device comprising:
- a memory cell array including a plurality of memory cells;
- a counter configured to count a number of memory cells having a threshold voltage included in a reference threshold voltage interval among the plurality of memory cells;
- a first decision unit configured to generate a comparison value based on the counted number of memory cells and a threshold value to thereby decide whether to set a read level based on the reference threshold voltage interval;
- and
- a second decision unit configured to generate a new reference threshold voltage interval based on the comparison value.
A method of controlling a read level, the method comprising:
- counting a number of memory cells having a threshold voltage included in a reference threshold voltage interval among a plurality of memory cells;
- generating a comparison value based on the counted number of memory cells and a threshold value;
- deciding whether to set a read level based on the reference threshold voltage interval, according to the comparison value;
- and
- deciding whether to set a new reference threshold voltage interval based on the comparison value.
A computer-readable recording medium storing a program for implementing a method of controlling a read level, the method comprising:
- counting a number of memory cells having a threshold voltage included in a reference threshold voltage interval among a plurality of memory cells;
- generating a comparison value based on the counted number of memory cells and a threshold value;
- deciding whether to set a read level based on the reference threshold voltage interval, according to the comparison value;
- and
- deciding whether to set a new reference threshold voltage interval based on the comparison value.
Dependencies are inferred from the claim text.