Circuit for generating a voltage and a non-volatile memory device having the same
AssigneeHynix Semiconductor Inc.
InventorSeok Joo Lee
Life of this patent
Estimating the term…
Abstract
A circuit for providing a voltage, which includes a first voltage generating circuit to output a first voltage generated by dividing an input voltage on the basis of resistance rate varied in accordance with a first control signal, a second voltage generating circuit to output a third voltage by using a second voltage, where the third voltage is shifted in accordance with a temperature, a third voltage generating circuit to change the third voltage by using a voltage shift rate set in accordance with a level of an operation voltage to be outputted at the temperature, thereby outputting a fourth voltage, and a comparison amplifying circuit configured to output the operation voltage in accordance with the first voltage, the fourth voltage and resistance rate.
Claims23
A circuit for generating a voltage comprising:
- a first voltage generating circuit configured to output a first voltage generated by dividing an input voltage on the basis of resistance rate varied in accordance with a first control signal;
- a second voltage generating circuit configured to output a third voltage by using a second voltage, wherein the third voltage is shifted in accordance with a temperature;
- a third voltage generating circuit configured to change the third voltage by using a voltage shift rate which is setted respectively in accordance with a level of an operation voltage to be outputted at the temperature, thereby outputting a fourth voltage;
- and
- a comparison amplifying circuit configured to output the operation voltage in accordance with the first voltage, the fourth voltage and resistance rate.
A non-volatile memory device comprising:
- a memory cell array configured to have memory cells for storing data;
- a page buffer circuit configured to have page buffers coupled to a bit line coupled to the memory cells of the memory cell array, and store temporarily data to be programmed to a selected memory cell or read data from a selected memory cell;
- a voltage providing circuit configured to provide a read voltage or a verifying voltage changed in accordance with control signals, wherein the control signals are generated in accordance with a voltage shift rate set depending on a level of the read voltage or the verifying voltage at a temperature;
- and
- a controller configured to output a control signal for storing the data in the memory cell array or reading the data, and outputting the control signals for controlling the voltage providing circuit.
Dependencies are inferred from the claim text.