Non-volatile semiconductor device

A nonvolatile semiconductor device comprising:

• a plurality of memory cells on a semiconductor substrate;
• at least one selection transistor on the semiconductor substrate and having an active layer including an oxide;
• and
• at least one contact connecting the active layer to at least one of a bit line and a common source line,
• wherein the at least one selection transistor is at a different level from the plurality of memory cells.

A nonvolatile semiconductor device comprising:

• a plurality of memory cells;
• and
• at least one selection transistor connecting the plurality of memory cells to a bit line or disconnecting the plurality of memory cells from the bit line,
• wherein the at least one selection transistor includes a control gate and an active layer including an oxide and the at least one selection transistor is at the same level as one or more of the plurality of memory cells.

A nonvolatile semiconductor device comprising:

• a plurality of word line patterns on a semiconductor substrate;
• at least one selection line pattern on the semiconductor substrate, the at least one selection line pattern including an active layer;
• and
• at least one contact connecting the active layer to at least one of a bit line and a common source line,
• wherein the active layer of the at least one selection line pattern includes an oxide, and the at least one selection line pattern is at a different level from the plurality of word line patterns.