Page buffer of non-volatile memory device and programming method of non-volatile memory device
AssigneeHynix Semiconductor Inc.
InventorsChang Won Yang, Jong Hyun Wang, Se Chun Park
Life of this patent
Estimating the term…
Abstract
A page buffer includes a first register, a second register and a data I/O unit. The first register temporarily stores data to be programmed into cells included in a first memory cell block group, or reads and stores data of a corresponding memory cell. The second register temporarily stores data to be programmed into cells included in a second memory cell block group, or reads and stores data of a corresponding memory cell. The data I/O unit inputs specific data to the first register and the second register, or outputs data stored in the first register and the second register.
Claims10
A page buffer comprising:
- a first register for temporarily storing data to be programmed into cells included in a first memory cell block group, and for reading and storing data of a corresponding memory cell;
- a second register for temporarily storing data to be programmed into cells included in a second memory cell block group, and for reading and storing data of a corresponding memory cell;
- and
- a data I/O unit for inputting data to the first register and the second register, and for outputting data stored in the first register and the second register;
- wherein the first register, the second register, and the data I/O unit are disposed between the first memory cell block group and the second memory cell block group.
A programming method of a non-volatile memory device, the method comprising:
- providing a page buffer including a first register connected to a first memory cell block group and a second register connected to a second memory cell block group;
- storing first data in the second register;
- transmitting the data stored in the second register to the first register;
- storing second data in the second register;
- and
- programming cells included in the first memory cell block group or cells included in the second memory cell block group according to data stored in each register.
Dependencies are inferred from the claim text.