Non-volatile memory device and method for writing data thereto

A method for writing data to a non-volatile memory device having first wirings and second wirings intersecting one another and memory cells arranged at each intersection therebetween, each of the memory cells having a variable resistive element and a rectifying element connected in series, the method comprising:

• charging the second wirings to a certain voltage not less than a rectifying-element threshold value, prior to a rise in a selected first wiring;
• charging the selected first wiring to a voltage required for writing or erasing;
• and
• discharging a selected second wiring,
• wherein after the selected second wiring is discharged, the selected second wiring is re-charged to the certain voltage, and
• wherein the time between discharging of the selected second wiring and re-charging of the selected second wiring to the certain voltage differs depending on data written in the selected memory cell.