Semiconductor device using magnetic domain wall movement and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsIn-jun Hwang, Sung-chul Lee
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Abstract
A semiconductor device using a magnetic domain wall movement and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a magnetic layer that is formed on a substrate and has a plurality of magnetic domains, and a unit that supplies energy to move a magnetic domain wall in the magnetic layer. The magnetic layer is formed parallel to the substrate, and includes a plurality of prominences and a plurality of depressions alternately formed along a lengthwise direction thereof. The magnetic layer has a stepped form that secures a reliable movement of the magnetic domain wall in units of one bit.
Claims12
A semiconductor device comprising:
- a magnetic layer on a substrate and having a plurality of magnetic domains;
- and
- a unit which supplies energy to move a magnetic domain wall in the magnetic layer;
- wherein
- the magnetic layer is parallel to the substrate and includes a plurality of prominences and a plurality of depressions alternating along a lengthwise direction of the magnetic layer, and a stepped portion between each prominence and adjacent depression,
- each of the prominences and depressions corresponds to one magnetic domain or one magnetic domain wall, and
- at least one of each of the prominences and each of the depressions is capable of pinning at least one of one magnetic domain and one magnetic domain wall.
A semiconductor device comprising:
- a magnetic layer on a substrate and having a plurality of magnetic domains;
- and
- a unit which supplies energy to move a magnetic domain wall in the magnetic layer;
- wherein
- the magnetic layer is parallel to the substrate and includes a plurality of prominences and a plurality of depressions alternating along a lengthwise direction of the magnetic layer, and
- each stepped portion between the prominences and the adjacent depressions is a pinning site for one magnetic domain wall or one magnetic domain.
Dependencies are inferred from the claim text.