Method for patterning a radiation beam, patterning device for patterning a radiation beam

A patterning device for patterning a radiation beam with a pattern in the cross section of the beam including a substrate and a pattern on a surface of the substrate, the pattern including a first die and a second die, each of the two dies having an axis separating the die in

• a first half-die area at one side of the axis, having a first pattern, and
• a second half-die area at the other side of the axis, having a second pattern, wherein
• a value, range or distribution of a first pattern characteristic property is associated with the first pattern;
• a value, range or distribution of a second pattern characteristic property is associated with the second pattern, and
• a half-die area of the first die and a half-die area of the second die directly adjacent that half-die area of the first die have a substantially same value, range or distribution of a same property, the same property being the first pattern characteristic property or the second pattern characteristic property.

A lithographic apparatus, comprising:

• an illumination system configured to condition a beam of radiation;
• a support configured to support a patterning device, the patterning device being configured to impart the radiation beam with a pattern in the cross section of the beam;
• a substrate table configured to support a substrate;
• and
• a projection system configured to project the patterned radiation beam onto a target portion of the substrate, wherein the patterning device is configured to provide a pattern including a first die and a second die, each of the two dies having an axis separating the die in
• a first half-die area at one side of the axis, having a first pattern, and
• a second half-die area at the other side of the axis, having a second pattern, wherein
• a value, range or distribution of a first pattern characteristic property is associated with the first pattern;
• a value, range or distribution of a second pattern characteristic property is associated with the second pattern, and
• a half-die area of the first die and a half-die area of the second die directly adjacent that half-die area of the first die have a substantially same value, range or distribution of a same property, the same property being the first pattern characteristic property or the second pattern characteristic property.