AE/AF sensor device with photometry conversion element formed using plural semiconductor regions and automatic focusing photoelectric conversion element formed using plural semiconductor regions

An AE/AF sensor device comprising:

• a first semiconductor region of a first conductivity type;
• a second semiconductor region of a second conductivity type opposite to the first conductivity type, said second semiconductor region being disposed in said first semiconductor region;
• a third semiconductor region of the second conductivity type formed in said first semiconductor region, said third semiconductor region being electrically isolated from said second semiconductor region;
• a fourth semiconductor region of the first conductivity type formed in said second semiconductor region;
• and
• a fifth semiconductor region of the first conductivity type formed in said third semiconductor region,
• wherein a photometry photoelectric conversion element is formed by using said second and fourth semiconductor regions, and an automatic focusing photoelectric conversion element is formed by using said third and fifth semiconductor regions, and
• wherein a peripheral circuit for operating the photometry photoelectric conversion element and/or the automatic focusing photoelectric conversion element is disposed between said second and third semiconductor regions,
• wherein the peripheral circuit comprises a well of the first conductivity type in which source and drain regions of a transistor of the second conductivity type are formed, and
• wherein the third semiconductor region is electrically isolated from the second semiconductor region by the well of the first conductivity type.