Solid-state imaging device, method of driving solid-state imaging device, and imaging apparatus

A solid-state imaging device comprising:

• a pixel array unit including unit pixels arranged in a matrix, each of the unit pixels having a photoelectric conversion element that converts a light signal to a signal charge, an amplifying transistor that amplifies and outputs the signal charge as a signal voltage, and a capacitive element with one side connected to a control electrode of the amplifying transistor;
• a driving unit configured to repeatedly perform an operation of causing the amplifying transistor to be in an OFF state or a deep accumulation state once or a plural number of times for a period of time while a signal is being read out from the unit pixel by the driving unit which selectively supplies a predetermined voltage to the other side of the capacitive element;
• and
• a band limiting circuit configured to perform a band limiting operation with respect to the signal output from the unit pixel through the amplifying transistor.

An imaging apparatus comprising:

• a solid-state imaging device in which unit pixels are arranged in a matrix and each of the unit pixels has a photoelectric conversion element that converts a light signal to a signal charge, an amplifying transistor that amplifies and outputs the signal charge as a signal voltage, and a capacitive element with one side connected to a control electrode of the amplifying transistor;
• and
• an optical system configured to guide light from a photographic subject onto an imaging surface of the solid-state imaging device,
• wherein,
• the solid-state imaging device includes
• (a) a driving unit configured to selectively supply a predetermined voltage to the capacitive element via a pulse supply line directly connected to the other side of the capacitive element;
• and
• (b) a signal processing circuit configured to perform a predetermined signal processing with respect to a signal output from each of the unit pixels,
• and wherein,
• the driving unit repeatedly performs an operation that causes the amplifying transistor to be in an OFF state or a deep accumulation state once or a plural number of times for a period of time while the signal is being read out from the unit pixel by the driving unit.

An imaging apparatus comprising:

• a solid-state imaging device in which unit pixels are arranged in a matrix and each of the unit pixels has a photoelectric conversion element that converts a light signal to a signal charge, an amplifying transistor that amplifies and outputs the signal charge as a signal voltage, and a capacitive element with one side connected to a control electrode of the amplifying transistor;
• and
• an optical system configured to guide light from a photographic subject onto an imaging surface of the solid-state imaging device,
• wherein the solid-state imaging device includes
• (a) a driving unit configured to repeatedly perform an operation of causing the amplifying transistor to be in an OFF state or a deep accumulation state once or a plural number of times for a period of time while a signal is being read out from the unit pixel by the driving unit which selectively supplies a predetermined voltage to the capacitive element via a pulse supply line directly connected to the other side of the capacitive element;
• and
• (b) a band limiting circuit configured to perform a band limiting operation with respect to a signal output from the unit pixel through the amplifying transistor.

A solid-state imaging device comprising:

• a pixel array unit including unit pixels arranged in a matrix, each of the unit pixels having a photoelectric conversion element that converts a light signal to a signal charge, an amplifying transistor that amplifies and outputs the signal charge as a signal voltage, and a capacitive element whose one end is connected to a control electrode of the amplifying transistor;
• a driving section configured to selectively supply a predetermined voltage to the capacitive element via a pulse supply line directly connected to the other side of the capacitive element;
• and
• a signal processing circuit configured to perform a predetermined signal processing with respect to a signal output from each pixel of the pixel array unit,
• wherein,
• the driving unit repeatedly performs an operation that causes the amplifying transistor to be in an OFF state or a deep accumulation state once or a plural number of times for a period of time while the signal is being read out from the unit pixel by the driving unit.

A solid-state imaging device comprising:

• a pixel array unit including unit pixels arranged in a matrix, each of the unit pixels having a photoelectric conversion element that converts a light signal to a signal charge, an amplifying transistor that amplifies and outputs the signal charge as a signal voltage, and a capacitive element with one side connected to a control electrode of the amplifying transistor;
• a driving section configured to repeatedly perform an operation of causing the amplifying transistor to be in an OFF state or a deep accumulation state once or a plural number of times for a period of time while a signal is being read out from the unit pixel by the driving unit which selectively supplies a predetermined voltage to the capacitive element via a pulse supply line directly connected to the other side of the capacitive element;
• and
• a band limiting circuit configured to perform a band limiting operation with respect to a signal output from the unit pixel through the amplifying transistor.

An imaging apparatus comprising:

• a solid-state imaging device in which unit pixels are arranged in a matrix and each of the unit pixels has a photoelectric conversion element that converts a light signal to a signal charge, an amplifying transistor that amplifies and outputs the signal charge as a signal voltage, and a capacitive element with one side connected to a control electrode of the amplifying transistor;
• and
• an optical system configured to guide light from a photographic subject onto an imaging surface of the solid-state imaging device,
• wherein the solid-state imaging device includes
• (a) a driving section configured to selectively supply a predetermined voltage to the capacitive element via a pulse supply line directly connected to the other side of the capacitive element;
• and
• (b) a signal processing circuit configured to perform a predetermined signal processing with respect to a signal output from each of the unit pixels,
• and wherein,
• the driving unit repeatedly performs an operation that causes the amplifying transistor to be in an OFF state or a deep accumulation state once or a plural number of times for a period of time while the signal is being read out from the unit pixel by the driving unit.

An imaging apparatus comprising:

• a solid-state imaging device in which unit pixels are arranged in a matrix and each of the unit pixels has a photoelectric conversion element that converts a light signal to a signal charge, an amplifying transistor that amplifies and outputs the signal charge as a signal voltage, and a capacitive element with one side connected to a control electrode of the amplifying transistor;
• and
• an optical system configured to guide light from a photographic subject onto an imaging surface of the solid-state imaging device,
• wherein the solid-state imaging device includes
• a driving section configured to repeatedly perform an operation of causing the amplifying transistor to be in an OFF state or a deep accumulation state once or a plural number of times for a period of time while a signal is being read out from the unit pixel by the driving section which selectively supplies a predetermined voltage to the capacitive element via a pulse supply line directly connected to the other side of the capacitive element;
• and
• a band limiting circuit configured to perform a band limiting operation with respect to a signal output from the unit pixel through the amplifying transistor.