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US 7,889,030 B2Granted
Passive temperature compensation of silicon MEMS devices
AssigneeInfineon Technologies AG
InventorsFlorian Schoen, Robert Gruenberger, Mohsin Nawaz, Bernhard Winkler
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Abstract
The invention relates to MEMS devices. In one embodiment, a micro-electromechanical system (MEMS) device comprises a resonator element comprising a semiconducting material, and at least one trench formed in the resonator element and filled with a material comprising oxide. Further embodiments comprise additional devices, systems and methods.
Claims25
A micro-electromechanical system (MEMS) device comprising:
- a resonator element comprising a semiconducting material;
- and
- at least one trench formed in the resonator element and filled with a material comprising oxide.
A micro-electromechanical system (MEMS) device comprising:
- a moveable element having a first temperature coefficient of elastic modulus;
- and
- at least one trench formed in the moveable element and filled with a material having a second temperature coefficient of elastic modulus different from the first temperature coefficient of elastic modulus.
A method comprising:
- forming a trench in a moveable portion of a micro-electromechanical system (MEMS) device;
- and
- filling the trench with a material having a temperature coefficient of elastic modulus different from a temperature coefficient of elastic modulus of the moveable portion.
Dependencies are inferred from the claim text.