Temperature compensation circuit
AssigneeKabushiki Kaisha Toshiba
InventorKoji Horie
Life of this patent
Estimating the term…
Abstract
A temperature compensation circuit according to an embodiment includes a bias circuit configured to output a bias current, the bias current having a current value increasing in proportion to absolute temperature, in a low temperature region in which a temperature is lower than a predetermined temperature, and having another current value increasing at a faster rate than the current value increasing in proportion to absolute temperature, in a high temperature region in which the temperature is equal to or greater than the predetermined temperature, and a transistor having a collector connected to a power supply terminal, an emitter which is grounded, and a base supplied with the bias current.
Claims18
A temperature compensation circuit comprising:
- a bias circuit configured to output a bias current, the bias current having a current value increasing in proportion to absolute temperature, in a low temperature region in which a temperature is lower than a predetermined temperature, and having another current value increasing at a faster rate than the current value increasing in proportion to absolute temperature, in a high temperature region in which the temperature is equal to or greater than the predetermined temperature;
- and
- a transistor having a collector connected to a power supply terminal, an emitter which is grounded, and a base supplied with the bias current,
- wherein the bias circuit comprises:
- a resistor configured to adjust the predetermined temperature by a resistance value of the resistor;
- and
- a further transistor configured to adjust the rate of the bias current in the high temperature region by a cell size of the further transistor.
A temperature compensation circuit comprising:
- a current source configured to output a first current having a current value proportional to absolute temperature;
- a bias circuit configured to cause no current to flow, in a low temperature region in which a temperature is lower than a predetermined temperature, and to output a second current having another current value increasing with increasing absolute temperature, in a high temperature region in which the temperature is equal to or greater than the predetermined temperature;
- a first transistor having an emitter which is grounded, and a collector supplied with an addition of the first and second currents, the emitter of the first transistor outputting a third current;
- and
- a second transistor having a collector connected to a power supply terminal, an emitter which is grounded, and a base connected to a base of the first transistor, the cell size of the second transistor being n times as large as the first transistor (n is any positive number), and the emitter of the second transistor outputting a current in which the third current is multiplied by n times.
A temperature compensation circuit comprising:
- a bias circuit configured to output a bias voltage, the bias voltage having a voltage value increasing in proportion to absolute temperature, in a low temperature region in which a temperature is lower than a predetermined temperature, and having another voltage value increasing at a faster rate than the voltage value increasing in proportion to absolute temperature, in a high temperature region in which the temperature is equal to or greater than the predetermined temperature;
- and
- a transistor having a source connected to a power supply terminal, a drain which is grounded, and a gate applied with the bias voltage,
- wherein the bias circuit comprises:
- a resistor configured to adjust the predetermined temperature by a resistance value of the resistor;
- and
- a further transistor configured to adjust the rate of the bias voltage in the high temperature region by a cell size of the further transistor.
Dependencies are inferred from the claim text.