Semiconductor device
AssigneePanasonic Corporation
InventorsKoji Takemura, Hiroshige Hirano, Yutaka Itoh, Hikari Sano, Masao Takahashi, Koji Koike
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Abstract
A semiconductor device includes at least three or more wiring layers stacked in an interlayer insulating film on a semiconductor substrate, a seal ring provided at the outer periphery of a chip region of the semiconductor substrate and a chip strength reinforcement provided in part of the chip region near the seal ring. The chip strength reinforcement is made of a plurality of dummy wiring structures and each of the plurality of dummy wiring structures is formed to extend across and within two or more of the wiring layers including one or none of the bottommost wiring layer and the topmost wiring layer using a via portion.
Claims17
A semiconductor device comprising:
- a plurality of interlayer insulating films stacked on a semiconductor substrate;
- at least three or more wiring layers formed in the plurality of interlayer insulating films;
- and
- a chip strength reinforcement formed in the plurality of interlayer insulating films, wherein
- the chip strength reinforcement is made of a plurality of dummy wiring structures and
- each of the plurality of dummy wiring structures is formed to extend across and within two or more of the wiring layers including only one or none of the bottommost wiring layer and the topmost wiring layer using a via portion.
Dependencies are inferred from the claim text.