Photodiode array and radiation detector having depressions of predetermined depth formed in regions corresponding to the regions where the photodiodes are formed in the semiconductor substrate
AssigneeHamamatsu Photonics K.K.
InventorKatsumi Shibayama
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Abstract
A photodiode array 1 is provided with an n-type silicon substrate 3. A plurality of photodiodes 4 are formed in array on the opposites surface side to an incident surface of light L to be detected, in the n-type silicon substrate 3. A depression 6 with a predetermined depth more depressed than a region not corresponding to regions where the photodiodes 4 are formed is formed in regions corresponding to the regions where the photodiodes 4 are formed, on the incident surface side of the light L to be detected, in the n-type silicon substrate 3.
Claims7
A photodiode array comprising a semiconductor substrate of a first conductive type,
- wherein a plurality of photodiodes are formed in array on an opposite surface side to an incident surface of light to be detected, in the semiconductor substrate,
- wherein a plurality of impurity diffused layers of a second conductive type are arranged in array on the opposite surface side to the incident surface of light to be detected, in the semiconductor substrate,
- wherein each of the plurality of photodiodes is formed by pn junction formed of the impurity diffused layer and the semiconductor substrate,
- wherein a plurality of depressions with a predetermined depth more depressed than a regions not corresponding to a region where the respective photodiodes is formed, are formed in the respective regions corresponding to the respective photodiodes is formed, on a side of the incident surface of the light to be detected, in the semiconductor substrate, and
- wherein adjacent depressions are in communication with each other at their respective corners, in the semiconductor substrate.
Dependencies are inferred from the claim text.