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US 7,888,765 B2Granted
Optical semiconductor device
AssigneePanasonic Corporation
InventorsMasaki Taniguchi, Hisatada Yasukawa, Takaki Iwai
Life of this patent
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Abstract
An optical semiconductor device includes a phototransistor for receiving incident light. The phototransistor includes a collector layer of a first conductivity type formed on a semiconductor substrate, a base layer of a second conductivity type formed on the collector layer, and an emitter layer of a first conductivity type formed on the base layer. A thickness of the emitter layer is equal to or less than an absorption length of the incident light in the semiconductor substrate.
Claims6
An optical semiconductor device, comprising a phototransistor for receiving incident light,
- wherein the phototransistor includes a N-type buried layer formed on a semiconductor substrate, a collector layer of a first conductivity type formed directly on the buried layer, a base layer of a second conductivity type formed on the collector layer, an emitter layer of a first conductivity type buried in the base layer, and an insulating layer extending to the N-type buried layer from a surface of the emitter layer, and
- a part of the base layer covering the emitter layer has a thickness equal to or larger than an absorption length of the incident light in the semiconductor substrate.
Dependencies are inferred from the claim text.