Backside illuminated imaging sensor with improved infrared sensitivity
AssigneeOmniVision Technologies, Inc.
InventorsYin Qian, Howard E. Rhodes, Hsin-Chih Tai, Vincent Venezia, Duli Mao
Life of this patent
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Abstract
A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared detecting layer is disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer.
Claims22
A backside illuminated imaging sensor, comprising:
- a semiconductor layer having a front surface and a back surface, the semiconductor layer having an imaging pixel that includes a photodiode region formed within the semiconductor layer;
- an infrared detecting layer disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer;
- and
- a metal conducting layer coupled to the infrared detecting layer.
A backside illuminated imaging sensor, comprising:
- a semiconductor layer having a front surface and a back surface, the semiconductor layer having an imaging pixel that includes a photodiode region formed within the semiconductor layer;
- an infrared detecting layer disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer;
- and
- a conductive layer coupled to the infrared detecting layer to electrically couple the infrared detecting layer to the photodiode region, wherein the conductive layer is transparent to at least the infrared light.
An imaging sensor, comprising:
- a semiconductor layer having a front surface and a back surface, the semiconductor layer having a backside illuminated array of imaging pixels, wherein each imaging pixel includes:
- a photodiode region formed within the semiconductor layer;
- an infrared detecting layer disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer;
- and
- a conductive layer coupled to the infrared detecting layer to electrically couple the infrared detecting layer to the photodiode region, wherein the conductive layer is transparent to at least the infrared light.
Dependencies are inferred from the claim text.