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US 7,888,762 B2Granted
Infrared detector and fabricating method of infrared detector
AssigneeOki Semiconductor Co., Ltd.
InventorKazuhide Abe
Life of this patent
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Abstract
There is provided an infrared detector including: a silicon substrate provided with a concave portion; an infrared receiver having a polysilicon layer; and a beam that supports the infrared receiver above the concave portion, and extends along a side of the infrared receiver from the infrared receiver to connect with the silicon substrate, the beam having at least two bent portions, wherein at least one of the bent portions of the beam is disposed at a position on a side opposite to the concave portion with the polysilicon layer as a reference point.
Claims13
An infrared detector comprising:
- a silicon substrate provided with a concave portion therein, the concave portion defining an opening;
- an infrared receiver having a polysilicon layer formed above the opening of the concave portion;
- and
- a beam that supports the infrared receiver above the opening of the concave portion, and extends from the infrared receiver along a side of the infrared receiver to connect with the silicon substrate, the beam having at least two bent portions,
- wherein the beam is extended from the infrared receiver at a position higher than the polysilicon layer by a maximum strain amount, so as to maintain the bent portions of the beam at a position above the opening of the concave portion when the beam is strained by the maximum strain amount.
2 more elements
Dependencies are inferred from the claim text.