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US 7,888,759 B2Granted
Photoelectric conversion device, imaging device, and process for producing the photoelectric conversion device
AssigneeFUJIFILM Corporation
InventorMikio Ihama
Life of this patent
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Abstract
A photoelectric conversion device comprising: a semiconductor substrate; an inorganic photoelectric conversion layer provided within the semiconductor substrate; and an organic photoelectric conversion layer provided above the inorganic photoelectric conversion layer, wherein the organic photoelectric conversion layer is prepared by a shadow mask method.
Claims10
A photoelectric conversion device comprising:
- a semiconductor substrate;
- an inorganic photoelectric conversion layer provided within the semiconductor substrate;
- and an organic photoelectric conversion layer provided above the inorganic photoelectric conversion layer, and
- further comprising:
- at least one counter electrode being adjacent to the organic photoelectric conversion layer;
- plural pixel electrodes being adjacent to the organic photoelectric conversion layer;
- and a connection electrode for connecting the counter electrode to the semiconductor substrate, the connection electrode being provided above the semiconductor substrate, wherein the counter electrode is connected to the connection electrode and wherein the entirety of the connection electrode is positioned between the counter electrode and the semiconductor substrate.
4 more elements
A photoelectric conversion device comprising:
- a semiconductor substrate;
- an inorganic photoelectric conversion layer provided within the semiconductor substrate;
- and an organic photoelectric conversion layer provided above the inorganic photoelectric conversion layer, wherein the organic photoelectric conversion layer has at least one counter electrode and plural pixel electrodes adjacent thereto;
- the counter electrode is connected to a connection electrode provided above the semiconductor substrate, the connection electrode being for connecting the counter electrode to the semiconductor substrate, and the entirety of the connection electrode being positioned between the counter electrode and the semiconductor substrate;
- and a distance between the connection electrode and the pixel electrode located in the closest position thereto is from 10 μm to 3 mm.
2 more elements
Dependencies are inferred from the claim text.