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US 7,888,757 B2Granted
Magnetic random access memory (MRAM) device on thermally-sensitive substrate
AssigneeInternational Business Machines Corporation
InventorArunava Gupta
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Abstract
A method of forming a magnetic memory device (and a resulting structure) on a low-temperature substrate, includes forming the memory device on a transparent substrate coated with a decomposable material layer subject to rapid heating resulting in a predetermined high pressure, and transferring the memory device to the low-temperature substrate.
Claims15
A magnetic memory device, comprising:
- a transparent substrate having decomposable material coated thereon;
- a device formed on said transparent substrate, said device comprising:
- a first conductive wiring;
- a magnetic tunnel junction coupled to said first conductive wiring;
- and
- a second conductive wiring fabricated on the transparent substrate;
- a low-temperature substrate for receiving the device, after the decomposable material is subjected to a predetermined high pressure;
- and
- an organic transistor disposed on the low temperature substrate, the organic transistor configured to interconnect with the device after the decomposable material is subjected to the predetermined high pressure.
6 more elements
Dependencies are inferred from the claim text.