Magnetic storage device with intermediate layers having different sheet resistivities

A memory comprising:

• a storage element including a storage layer for storing information based on the magnetization state of a magnetic material;
• and
• two kinds of wirings crossing to each other, wherein said storage element includes magnetization fixed layers provided above and below said storage layer and intermediate layers between said magnetization fixed layers and said storage layer, said two intermediate layers are all made of insulating layers, magnetization directions of ferromagnetic layers closest to said storage layer are opposite to each other in said magnetization fixed layers above and below said storage layer, the magnetization direction of said storage layer is changed with application of an electric current to record information on the storage layer, said two intermediate layers above and below said storage layer have a difference between sheet resistivity values thereof, magnetoresistance variation of said intermediate layer having a high sheet resistivity value is larger than that of said intermediate layer having a low sheet resistivity value, said storage element is located near an intersection point between said two kinds of wirings and between said two kinds of wirings and an electric current flows through said two kinds of wirings to said storage element.

A memory comprising:

• a storage element including a storage layer for storing information based on the magnetization state of a magnetic material;
• and
• two kinds of wirings crossing to each other, wherein said storage element includes magnetization fixed layers provided above and below said storage layer and intermediate layers between said magnetization fixed layers and said storage layer, said two intermediate layers are all made of insulating layers, magnetization directions of ferromagnetic layers closest to said storage layer are opposite to each other in said magnetization fixed layers above and below said storage layer, the magnetization direction of said storage layer is changed with application of an electric current to record information on the storage layer, said two intermediate layers above and below said storage layer have a difference between sheet resistivity values thereof, a sheet resistivity value of one of said intermediate layers is larger than twice that of the other of said intermediate layer, said storage element is located near an intersection point between said two kinds of wirings and between said two kinds of wirings and an electric current flows through said two kinds of wirings to said storage element.