US 7,888,744 B2 · Strained semiconductor, devices and systems and methods of formation

Abstract

In various method embodiments, a device region is defined in a semiconductor substrate and isolation regions are defined adjacent to the device region. The device region has a channel region, and the isolation regions have volumes. The volumes of the isolation regions are adjusted to provide the channel region with a desired strain. In various embodiments, adjusting the volumes of the isolation regions includes transforming the isolation regions from a crystalline region to an amorphous region to expand the volumes of the isolation regions and provide the channel region with a desired compressive strain. In various embodiments, adjusting the volumes of the isolation regions includes transforming the isolation regions from an amorphous region to a crystalline region to contract the volumes of the isolation regions to provide the channel region with a desired tensile strain. Other aspects and embodiments are provided herein.

Claims25

Dependent claims

A semiconductor structure, comprising:

a device region and isolation regions on opposing sides of the device region, wherein the isolation regions include recrystallized semiconductor adjacent to a native semiconductor oxide;
the device region including a first source/drain region, a second source/drain region, and a channel region between the first source/drain region and the second source drain region;
and
the channel region including a strain induced by the isolation regions.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

12/346,281Filed 30 Dec 2008 · division

Priority

2 Aug 2006

Published

US 2009/0108363 A130 Apr 2009

Granted

15 Feb 2011

Term ends

Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10P 30/204
Characterised by the semiconductor materials: into Group IV semiconductors
H10D 30/0227
Having source and drain regions or source and drain extensions self-aligned to sides of the gate: having both lightly-doped source and drain…
H10D 30/601
Insulated-gate field-effect transistors [IGFET]: having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs
H10D 30/795
Arrangements for exerting mechanical stress on the crystal lattice of the channel regions: being in lateral device isolation regions, e.g. STI

Strained semiconductor, devices and systems and methods of formation

Life of this patent

Strained semiconductor, devices and systems and methods of formation

Life of this patent

Abstract

Claims25