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US 7,888,742 B2Granted
Self-aligned metal-semiconductor alloy and metallization for sub-lithographic source and drain contacts
AssigneeInternational Business Machines Corporation
InventorsGuy M. Cohen, Paul M. Solomon
Life of this patent
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Abstract
A lateral double-gate FET structure with sub-lithographic source and drain regions is disclosed. The sub-lithographic source and drain regions are defined by a sacrificial spacer. Self-aligned metal-semiconductor alloy and metal contacts are made to the sub-lithographic source and drain using conventional silicon processing.
Claims15
A double-gate field effect transistor (FET) comprising:
- a single-crystal semiconductor channel located within a single-crystal semiconductor film;
- a top-gate and a back-gate on either side of the single-crystal semiconductor channel for controlling the current through the single-crystal semiconductor channel;
- a source region and a drain region adjacent to the single-crystal semiconductor channel and located within the single-crystal semiconductor film, said source and drain regions have a lateral size of 0.1 microns or less;
- a metal-semiconductor alloy region located on and self-aligned to an exposed horizontal surface of both the source region and the drain region;
- and
- a buried metal line connecting to an edge of each of said metal-semiconductor alloy regions.
3 more elements
A double-gate field effect transistor (FET) comprising:
- a single-crystal Si channel located with a single-crystal Si layer;
- a top-gate and a back-gate on either side of the single-crystal Si channel for controlling the current through the single-crystal Si channel;
- a source region and a drain region adjacent to the single-crystal Si channel and located within said single-crystal Si layer, said source and drain regions have a lateral size of 0.1 microns or less;
- a raised source and raised drain fanned on top of said source region and said drain region;
- a silicide region located on and self-aligned to exposed horizontal surface of both said raised source and said raised drain, and over the top-gate;
- a buried metal line connecting to an edge of each of said silicide regions;
- and
- a metal stud connecting to each of the buried metal lines.
5 more elements
Dependencies are inferred from the claim text.