US 7,888,741 B2 · Structures with improved interfacial strength of SiCOH dielectrics and method for preparing the same

Abstract

A semiconductor device structure and method for manufacture includes a substrate having a top first layer; a second thin transition layer located on top of the first layer; and, a third layer located on top of the transition layer, wherein the second thin transition layer provides strong adhesion and cohesive strength between the first and third layers of the structure. Additionally, a semiconductor device structure and method for manufacture includes an insulating structure comprising a multitude of dielectric and conductive layers with respective transition bonding layers disposed to enhance interfacial strength among the different layers. Further, an electronic device structure incorporates layers of insulating and conductive materials as intralevel or interlevel dielectrics in a back-end-of-the-line (“BEOL”) wiring structure in which the interfacial strength between different pairs of dielectric films is enhanced by a thin intermediate transition bonding layer.

Claims16

Dependent claims

A semiconductor structure comprising:

an insulating material having a metal region comprised of Cu embedded therein located on a surface of a substrate;
a transition adhesion layer located on an upper surface and said insulating material, but not extending onto an upper surface of said metal region;
and
a dielectric layer comprising a carbon-doped oxide including atoms of Si, C, O and H located on an upper surface of said transition adhesion layer and in direct contact with at least a portion of the metal region, wherein said transition adhesion layer includes at least atoms of Si, C, O and H and is oxygen rich, carbon depleted or both oxygen rich an carbon depleted as compared to the dielectric layer.

1 more element

An electronic device structure having layers of insulating material functioning as intralevel or interlevel dielectrics comprising:

a semiconductor substrate having a first region of metal embedded in a first layer of insulating material;
a second layer of insulating material including a first region of conductor embedded therein, said second layer of insulating material is separated from said first layer of insulating material by a transition adhesion layer, said first region of conductor is in electrical communication with said first region of metal and said transition adhesion layer does not extend onto an upper surface of said first region of conductor embedded in said first layer of insulting material;
and
a third layer of insulating material including a second region of conductor comprised of CU embedded therein, said second region of conductor is in electrical communication with said first region of conductor, wherein said third layer of insulating material is a carbon-doped oxide including atoms of Si, C, O and H and said transition adhesion layer is located directly between the first layer of insulating material and the second layer of insulting material and comprises at least atoms of Si, C, O and H and is oxygen rich, carbon depleted or both oxygen rich and carbon depleted as compared with said second layer of insulating material.

1 more element

Dependencies are inferred from the claim text.

Structures with improved interfacial strength of SiCOH dielectrics and method for preparing the same

Life of this patent

Structures with improved interfacial strength of SiCOH dielectrics and method for preparing the same

Life of this patent

Abstract

Claims16