Semiconductor device and method of manufacturing the same
AssigneeFujitsu Semiconductor Limited
InventorsTomohiko Tsutsumi, Taiji Ema, Hideyuki Kojima, Toru Anezaki
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Abstract
The semiconductor device includes a first MIS transistor including a gate insulating film 92, a gate electrode 108 formed on the gate insulating film 92 and source/drain regions 154, a second MIS transistor including a gate insulating film 96 thicker than the gate insulating film 92, a gate electrode 108 formed on the gate insulating film 96, source/drain regions 154 and a ballast resistor 120 connected to one of the source/drain regions 154, a salicide block insulating film 146 formed on the ballast resistor 120 with an insulating film 92 thinner than the gate insulating film 96 interposed therebetween, and a silicide film 156 formed on the source/drain regions 154.
Claims8
A semiconductor device comprising:
- a first MIS transistor formed over a semiconductor substrate and including a first gate insulating film, a first gate electrode formed on the first gate insulating film and first source/drain regions formed in the semiconductor substrate;
- a second MIS transistor formed over the semiconductor substrate and including a second gate insulating film thicker than the first gate insulating film, a second gate electrode formed on the second gate insulating film, second source/drain regions formed in the semiconductor substrate and a ballast resistor formed in the semiconductor substrate and connected to one of the second source/drain regions;
- a salicide block insulating film formed over the ballast resistor with an insulating film thinner than the second gate insulating film interposed therebetween;
- and
- a silicide film formed on the first source/drain regions and on the second source/drain regions,
- wherein an impurity concentration of the ballast resistor is higher than an impurity concentration of LDD regions or extension regions of the second source/drain regions.
Dependencies are inferred from the claim text.